The CV200 CV Test System is primarily used for monitoring process parameters of MOS wafer substrates, such as capacitance, oxide thickness, doping concentration, and flatband voltage. It meets the requirements for epitaxial wafer testing of MOS, PN junction capacitance, and MIS structure capacitance. The system can be flexibly configured according to specific needs, including quasi-static CV testing, high-frequency CV testing, variable temperature bias heating plate, and vacuum control panel. It offers both platform test integrity and flexibility, and combines the BTS method. The C-V test software extracts mobile charges, and the analysis software calculates interface trap charges.

Application: MOSFET Wafer Substrate Process Parameter Extraction

Technical Specifications:

CV Test Frequency: 20Hz to 1MHz

Scan bias voltage range ±100V, current output ±1A

Hot Plate: Diameter 200mm, nickel-plated surface, vacuum吸附able, with water-cooling interface, temperature range room temperature to 200°C, plate temperature can be controlled by computer.

Light-proof Enclosure: Metal shielding, black, with programmable light on/off status.

Thermocouple: Software-programmable temperature control, heating suction cups, temperature controller, including connection cables

CV Tester Software Features: Controls LCR meter, scans CV curve, adjustable bias power supply, temperature controller, including the C-V movable charge production software module

MOS Test Module, Scanning Frequency MOS C-V Test Module. The software analysis function provides CV test curves, mobile charge density, oxide thickness, flatband voltage, and other parameters, automatically stores data, and supports exporting in custom formats.