4A Triac Bidirectional SCR BTA04 Product Features:
NPNPN five-layered silicon bidirectional device
Type P Through Hole Diffused Isolation
Tabletop glass passivation process
Backside multi-layer metal electrodes
High work temperature; strong reversing capability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Packaging Type: TO-220A
4A Three-terminal双向可控硅BTA04's Limiting ParametersCASE=25℃)：
| Symbol | Parameters | Number | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 4 | A |
| ITSM | Non-repetitive surge current in conducting state | 40 | |
| I2t | I2t-value | 8 | A2s |
| dIT/dt | Critical rise rate of on-state current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Gate average power | 1 | W |
| Tstg | Storage Temperature | -40~+150 | ℃ |
| Tj | Job completion temperature | -40~+125 |
Electrical characteristics of the 4A triode bidirectional可控硅 BTA04:
| Symbol | Parameters | Numeric Values | Unit | ||
| TW | SW | CW | |||
| IGT | Gate trigger current | ≤5 | ≤10 | ≤35 | mA |
| VGT | Gate trigger voltage | ≤1.3 | V | ||
| VGD | Gate voltage not triggering | ≥0.2 | |||
| IH | Maintain current | ≤10 | ≤15 | ≤35 | mA |
| IL | Maintain Current I-III | ≤10 | ≤25 | ≤50 | |
| Hold Current II | ≤15 | ≤30 | ≤60 | ||
| dVD/dt | Critical rise rate of off-state voltage | ≥20 | ≥40 | ≥400 | V/μs |
| VTM | Forward Bias Voltage Drop | ≤1.55 | V | ||
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM=VRRM,TJ=25℃ | ≤5 | ≤5 | ≤5 | μA |
Off-state repetitive peak current VD=VDRM=VRRM,TJ=125℃ | ≤0.5 | ≤0.5 | ≤0.5 | mA | |
Package dimensions of 4A triode bidirectional可控硅 BTA04:
