Three-quadrant bidirectional silicon-controlled rectifierApplication of T1635:
Heating Controller
Motor speed controller
Blender
Direct transmitter
Bread machines and other home appliances
Three-phase bidirectional silicon controlled rectifierFeatures of T1635:
NPNPN five-layered silicon bidirectional device
P-type Thru Diffused Isolation
Tabletop glass passivation process
Backside multi-layer metal electrodes
High work temperature resistance, strong directional change ability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Three-phase bidirectional可控硅T1635's Limiting Parameters:
| Symbol | Parameters | Numerical | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 16 | A |
| ITSM | Non-repetitive surge current in conducting state | 160 | A |
| I2t | I2t-value | 144 | A2s |
| dIT/dt | Critical rise rate of forward current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Gate average power | 1 | W |
| TSTG | Storage Temperature | -40~+150 | ℃ |
| Tj | Operating Temperature | -40~+125 | ℃ |
Three-phase bi-directional silicon controlled rectifierT1635 Electrical Characteristics:
| Symbol | Parameters | Numeric | Unit |
| IGT | Gate trigger current | ≤35 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V |
| VGD | Gate trigger voltage not triggered | ≥0.2 | V |
| IH | Maintain Current | ≤35 | mA |
| IL | Maintain Current I-III | ≤50 | mA |
| Maintain Current II | ≤60 | mA | |
| dVD/dt | Critical dv/dt (voltage rise rate) | ≥500 | V/μs |
| VTM | Forward Voltage Drop | ≤1.55 | V |
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,Tj=25℃ | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,Tj=125℃ | ≤1 | mA |
Three-quadrant bidirectional silicon-controlled rectifierT1635 Package Outline Dimensions:
