Dongguan Yu Xin Electronics Co., Ltd.VIP

可控硅一站式解决方案供应商
Enter Shop

100V MOSFET 4N10 SOT23-6

平台认证
  • Unit Price

    Negotiable

  • Brand

    Yu芯Micro

  • MOQ

Contact
Leave Msg

Platform Service

Supplier Verified



东莞市宇芯电子有限公司

VIP   数字营销第2年
资料通过中商114认证

Product Details

Specs

Gallery

  • Brand:

    Yu芯Micro

  • Unit Price:

    Negotiable

  • MOQ:

  • Total:

    0PCS

  • Address:

    GuangdongDongguan

  • Delivery:

    0Hours

  • View More

Description


Low on-state resistance N-channel MOSFET 4N10 pinout diagram:



Low on-state resistance N-channel MOSFET 4N10 features:

  • VDS=100V

  • ID=3.8A

  • RDS(ON)<240mΩ@VGS=10V

  • Packaging: SOT-23-3L



Low on-state resistance N-channel MOSFET 4N10 Applications:

  • Battery Protection

  • Load Switch

  • Uninterruptible Power Supply (UPS)



Low On-Resistance N-Channel MOSFET 4N10's Ultimate Parameters:

(As noted otherwise, T)C=25℃)

SymbolParametersNumericUnit
VDSDrain-Source Voltage100V
VGSGate-Source Voltage±20
IDLeakage Current - ContinuousC=25℃3.8A
Leakage Current - ContinuousC=100℃2
IDMLeakage Current - Pulse8
PDTotal Dissipation Power (T)C=25℃3.76W
TSTGStorage Temperature-55~150
TJWork temperature-55~150
RθJAThermal resistance to the environment70℃/W
RθJC
Thermal resistance to the casing30



Low on-state resistance N-channel MOSFET 4N10 electrical characteristics:

(As noted unless otherwise specified, T)J=25℃)

Symbol
ParametersMIN ValueTypical ValueMAX ValueUnit
BVDSSLeakage-Source Emitter Breakdown Voltage100

V
RDS(ON)

DC Leakage On-Resistance

VGS=10V,ID=1A


210240

DC Leakage On-Resistance

VGS=4.5V,ID=0.5A


240280
VGS(th)
Gate-Trigger Voltage11.92.5V
IDSS

Zero栅压漏极电流

VDS=100V,VGS=0V,TJ=25℃



1uA

Zero栅压漏极电流

VDS=80V,VGS=0V,TJ=125℃



10
IGSSGate leakage current

±100nA
gfsForward Bias Conductance
2.3
S
Qg
Gate Total Charge
918nC
QgsLatticed charge density
2.34.6
QgdGrid leakage charge density
1.12.5
CissInput Capacitor
152200pF
CossOutput Capacitor
1720
CrssReverse Transmission Capacitor
1015
td(on)Delay Start Time
5.210ns
trInitiate ascending time
6.812
td(off)Shut-off delay time
14.528
tf
Start descent time
2.15



Low on-resistance N-channel MOSFET, 4N10 package dimensions:

Disclaimer:Info provided by user, user liable for authenticity, accuracy & legality. Zhongshang114 assumes no liability.

Tip:Confirm supplier qualification & quality before purchase to avoid risks.

Unit Price Negotiable
Inquiry None
Delivery GuangdongDongguan
Brand Yu芯Micro
Product Type Medium and low voltage MOSFETs
Product Model 4N10
Product Packaging SOT-23-3L
Expiry Long Valid
Update 2024-05-17 16:15
Gallery

Dongguan Yu Xin Electronics Co., Ltd.Published by100V MOSFET 4N10 SOT23-6Gallery Lib

Contact Merchant



Join

Successful Enterprise Join, Enjoy Multiple Privileges

Join Hotline:4006299930

Please scan with mobile phone

Customer Service

Service Hotline:4006299930

Official Account

WeChat Official Account, Get Business Opportunities

Scan to follow WeChat

Top