12A Bi-directional Silicon Controlled Rectifier T1235's Limit Values:
| Symbol | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 800/1000 | V |
| IT(RMS) | DC RMS Current | 12 | A |
| ITSM | Non-repetitive surge current in conducting state | 120 | |
| I2t | I2t value | 78 | A2s |
| dIT/dt | Critical rise rate of on-state current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Average Gate Power | 1 | W |
| TSTG | Storage Temperature | -40~+150 | ℃ |
| Tj | Work temperature | -40~+150 |
12A Bi-directional Silicon Controlled Rectifier T1235 Electrical Characteristics:
| Symbol | Parameters | Number | Unit |
| IGT | Gate trigger current | 35 | mA |
| VGT | Gate trigger voltage | 1.5 | V |
| VGD | Gate trigger voltage not activated | 0.2 | |
| IH | Maintain Current | 45 | mA |
| IL | Maintain Current I-III | 50 | |
Hold Current II | 70 | ||
| dVD/dt | Off-state voltage critical rise rate | 1000 | V/μs |
| VTM | Forward Voltage Drop | 1.5 | V |
| IDRM/IRRM | Off-state repetitive peak current VDRM/VRRM,TJ=25℃ | 5 | μA |
Off-state repetitive peak current VDRM/VRRM,TJ=125℃ | 1 | mA |
