4A Single-Sided可控硅 X0405M Product Features:
PNPN four-layer silicon unidirectional device
Door with highly sensitive trigger
Type P Thru Diffused Isolation
Tabletop glass passivation process
Backside multi-layer metal electrodes
Compliant with RoHS standards
Packaging Type: TO-252
4A Single Direction Silicon Controlled Rectifier X0405M Application Fields:
X0405M Silicon Controlled Rectifier (SCR) is used in: pulse igniters, negative ion generators, logic circuit drives, transmitters, dimmer switches, coffee makers, LED controllers, and more.
4A Single-Sided可控硅 X0405M's Limit ValuesCASE=25℃)：
Off-state repetitive peak voltage VDRM/VRRM：600/800V
DC RMS Current IT(RMS)：4A
Tong Tai Average Current IT(AV)：2.5A
Non-repetitive surge current in conducting stateTSM：30A
I2t value: 4.5A2s
Critical rise rate of on-state current dIT/dt：50A/μs
Gate Peak Current IGM：1.2A
Peak Power of Gate Terminal PGM：1W
Gate Average Power PG(AV)：0.2W
Storage Temperature: TSTG：-40~+150℃
Work Temperature Tj：-40~+110℃
4A Silicon Controlled Rectifier X0405M Electrical Characteristics:
| Symbol | Parameters | Numeric | Unit | ||
| MIN | TYP | MAX | |||
| IGT | Gate trigger current | 10 | 200 | μA | |
| VGT | Gate Trigger Voltage | 0.65 | 0.8 | V | |
| VGD | Gate trigger voltage not activated | 0.2 | |||
| IH | Maintain Current | 5 | mA | ||
| IL | Hold the current | 6 | |||
| dVD/dt | Critical voltage rise rate in off-state | 10 | V/μs | ||
| VTM | Forward Bias Voltage Drop | 1.55 | V | ||
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,TJ=25℃ | 5 | μA | ||
Off-state repetitive peak current VD=VDRM/VRRM,TJ=110℃ | 150 | ||||
