NMOSFET 4N15 Application Areas:
Battery Protection
Load Switch
UPS Uninterruptible Power Supply
NMOSFET 4N15's Absolute Maximum Ratings:
(As specified unless otherwise stated, T)C=25℃)
| Symbol | Parameters | Number | Unit |
| VDS | Drain-Source Voltage | 150 | V |
| VGS | Gate-Source Voltage | ±20 | |
| ID | Leakage Current - Continuous | 4 | A |
| IDM | Leakage Current - Pulse | 9 | |
| PD | Total Dissipation Power | 2 | W |
| RθJA | Thermal resistance to the environment | 125 | ℃/W |
| RθJC | Thermal resistance to the shell | 80 | |
| TSTG | Storage Temperature | -55~150 | ℃ |
| TJ | Working Temperature | -55~150 |
Electrical characteristics of NMOSFET 4N15:
(As specified unless otherwise stated, T)J=25℃)
| Symbol | Parameters | MIN Value | TYP value | MAX Value | Unit |
| BVDSS | Leakage-Source Breakdown Voltage | 150 | 165 | V | |
| RDS(ON) | DC Leakage On-Resistance VGS=10V,ID=1.5A | 220 | 280 | mΩ | |
| DC Leakage On-Resistance VGS=4.5V,ID=1.5A | 230 | 300 | |||
| VGS(th) | Gate-Opening Voltage | 1 | 1.8 | 3 | V |
| IGSS | Gate leakage current | ±100 | nA | ||
| Qg | Gate Charge | 8 | nC | ||
| Qgs | Lattice charge density | 1.4 | |||
| Qgd | Grid leakage charge density | 2.1 | |||
| Ciss | Input Capacitor | 235 | pF | ||
| Coss | Output Capacitor | 36 | |||
| Crss | Reverse Transmission Capacitor | 20 | |||
| td(on) | Delay Start Time | 8 | ns | ||
| tr | Initiate ascent time | 10 | |||
| td(off) | Shut-off delay time | 20 | |||
| tf | Initiate descent time | 15 |
