High Junction Temperature Silicon Controlled Rectifier T1235 Application Areas:
T1235 Bidirectional可控Silicon Thyristors are used in: heating controllers, motor speed controllers, mixers, straighteners, bread makers, and other household appliances.
High junction temperature thyristor T1235's limit value (T)CASE=25℃)：
Off-state Repeat Peak Voltage VDRM/VRRM：600/800V
DC RMS Current IT(RMS)：12A
Non-repetitive surge current in conducting stateTSM：120A
I2t-value: 78A2s
Critical rise rate of forward current dIT/dt：50Aμs
Gate Peak Current IGM：4A
Average Gate Power PG(AV)：1W
Storage Temperature: TSTG：-40~+150℃
Working Temperature Tj：-40~+125℃
High junction temperature可控硅 T1235 electrical characteristics:
| Symbol | Parameters | Numeric | Unit |
| IGT | Gate trigger current | ≤35 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V |
| VGD | Gate trigger voltage not activated | ≥0.2 | |
| IH | Maintain Current | ≤35 | mA |
| IL | Maintain Current I-III | ≤50 | |
Hold Current II | ≤60 | ||
| dVD/dt | Critical dv/dt of off-state voltage | ≥500 | V/μs |
| VTM | Forward Voltage Drop | ≤1.55 | V |
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,TJ=25℃ | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,TJ=125℃ | ≤1 | mA |
