One, Footprint diagram of T1610:
Section II: Features of T1610:
NPNPN five-layer silicon bidirectional device
P-type through diffusion isolation
Tabletop glass passivation process
Backside multi-layer metal electrodes
High working temperature, strong reversing ability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Packaging Type: TO-220A
Section 3: Application of T1610:
Heating controllers, motor speed controllers, mixers, straighteners, bread makers, and other household appliances
Four, T1610's Limiting Parameters (T)CASE=25℃)：
| Symbol | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 16 | A |
| ITSM | Non-repetitive surge current in conducting state | 160 | |
| I2t | I2t value | 144 | A2s |
| dIT/dt | Critical rise rate of forward current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Gate average power | 1 | W |
| TSTG | Storage Temperature | -40~+150 | ℃ |
| Tj | Work Temperature | -40~+125 |
V. Electrical Characteristics of T1610:
| Symbol | Parameters | Numeric | Unit |
| IGT | Gate trigger current | ≤10 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V |
| VGD | Gate trigger voltage does not activate | ≥0.2 | |
| IH | Maintain Current | ≤15 | mA |
| IL | Maintain Current I-III | ≤25 | |
| Hold Current II | ≤30 | ||
| dVD/dt | Cutoff voltage critical rise rate | ≥40 | V/μs |
| VTM | Forward Voltage Drop | ≤1.55 | V |
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,Tj=25℃ | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,Tj=125℃ | ≤1 | mA |
