Product Features of BTA06 Triple Terminal Bidirectional Silicon Controlled Rectifier:
NPNPN five-layer silicon bidirectional device
P-type through diffusion isolation
Tabletop glass passivation process
Backside multi-layer metal electrodes
High working temperature, strong reversing ability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Packaging Type: TO-220F
BTA06 Three-terminal Bidirectional Silicon Controlled Rectifier Application Fields:
BTA06 Bidirectional Thyristor Applications: Heating Controllers, Motor Speed Controllers, Blenders, Straighteners, Bread Machines, and other household appliances.
BTA06 Triac's Limiting Values (T)CASE=25℃)：
| Symbol | Parameters | Numeric Value | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 6 | A |
| ITSM | Non-repetitive surge current in conducting state | 60 | |
| I2t | I2t-value | 21 | A2s |
| dIT/dt | Critical rise rate of conducting current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Average Gate Power | 1 | W |
| Tstg | Storage Temperature | -40~+150 | ℃ |
| Tj | Working temperature | -40~+125 |
BTA06 Three-terminal双向可控硅Electrical Characteristics:
| Symbol | Parameters | Numeric values | Unit | ||
| TW | SW | CW | |||
| IGT | Gate trigger current | ≤5 | ≤10 | ≤35 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V | ||
| VGD | Gate trigger voltage is not activated | ≥0.2 | |||
| IH | Maintain current | ≤10 | ≤15 | ≤35 | mA |
| IL | Hold Current I-III | ≤10 | ≤25 | ≤50 | |
Hold Current II | ≤15 | ≤30 | ≤60 | ||
| dVD/dt | Critical rise rate of off-state voltage | ≥20 | ≥40 | ≥400 | V/μs |
| VTM | Forward Bias Voltage Drop | ≤1.55 | V | ||
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,TJ=25℃ | ≤5 | ≤5 | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,TJ=125℃ | ≤1 | ≤1 | ≤1 | mA | |
