Three-phase bi-directional silicon controlled rectifierPinout diagram for BTA08-600TW:
Triple-axis bidirectional可控硅Features of BTA08-600TW:
NPNPN five-layer silicon bidirectional device
P-type through diffusion isolation
Surface glass passivation process
Backside multi-layer metal electrodes
High working temperature, strong directional change ability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Packaging: TO-220A
Three-phase bidirectional可控硅Application of BTA08-600TW:
Heating controllers, dimmer/variable speed controllers, washing machines, mixers, juicers, bread makers, vacuum cleaners, etc. household appliances
Three Quadrant Bi-directional Silicon Controlled RectifierBTA08-600TW's limit value:
| Symbol | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600 | V |
| IT(RMS) | DC RMS Current | 8 | A |
| ITSM | Non-repetitive surge current in conductive state | 80 | |
| I2t | I2t value | 36 | A2s |
| dIT/dt | Critical Rise Rate of Forward Current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Gate average power | 1 | W |
| TSTG | Storage Temperature | -40~+150 | ℃ |
| Tj | Work Completion Temperature | -40~+125 |
Three Quadrant Bi-directional Silicon Controlled RectifierElectrical characteristics of BTA08-600TW:
| Symbol | Parameters | Number | Unit |
| IGT | Gate trigger current | ≤5 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V |
| VGD | Gate trigger voltage not activated | ≥0.2 | |
| IH | Maintain current | ≤10 | mA |
| IL | Maintain Current I-III | ≤10 | |
| Hold Current II | ≤15 | ||
| dVD/dt | Cutoff voltage critical rise rate | ≥20 | V/μs |
| VTM | Forward Voltage Drop | ≤1.55 | V |
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,Tj=25℃ | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,Tj=125℃ | ≤1 | mA |
