Three Quadrant Bi-directional Silicon Controlled Rectifier BTA08 Product Features:
NPNPN five-layered silicon bidirectional device
P-type through-diffused isolation
Tabletop glass passivation process
Backside multi-layer metal electrodes
High working temperature, strong reversing capability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with ROHS standards
Three-phase bidirectional silicon controlled rectifier BTA08 product applications:
Heating Controller
Dimming/Speed Control Unit
Washing Machine
Blender
Juice Extractor
Bread machine
Vacuum cleaners and other household appliances
The limit values of the three-quadrant bidirectional silicon-controlled rectifier BTA08:
| Symbol | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 8 | A |
| ITSM | Non-repetitive surge current in conductive state | 80 | |
| I2t | I2t-value | 36 | A2s |
| dIT/dt | Critical rise rate of forward current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Gate average power | 1 | W |
| Tstg | Storage Temperature | -40~+150 | ℃ |
| Tj | Work completion temperature | -40~+125 |
Three-phase bidirectional可控硅 BTA08 electrical characteristics:
| Symbol | Parameters | Number | Unit | ||
| TW | SW | CW | |||
| IGT | Gate trigger current | ≤5 | ≤10 | ≤35 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V | ||
| VGD | Gate trigger voltage is not activated | ≥0.2 | |||
| IH | Maintain Current | ≤10 | ≤15 | ≤35 | mA |
| IL | Maintain Current I-III | ≤10 | ≤25 | ≤50 | |
Holding Current II | ≤15 | ≤30 | ≤60 | ||
| dVD/dt | Critical dv/dt (voltage rise rate) | ≥20 | ≥40 | ≥400 | V/μs |
| VTM | Forward Bias Voltage Drop | ≤1.55 | V | ||
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,TJ=25℃ | ≤5 | ≤5 | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,TJ=125℃ | ≤1 | ≤1 | ≤1 | mA | |
Package and dimensional drawing of the three-quadrant bidirectional thyristor BTA08:
