High Purity Temperature-Controlled Silicon BTA12 Product Features:
NPNPN five-layer silicon bidirectional device
P-type Through Diffused Isolation
Tabletop glass passivation process
Backside multilayer metal electrodes
High workability temperature, strong reversing ability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Packaging Type: TO-220F
High Purity Temperature-Controlled Silicon BTA12 Application Fields:
BTA12 bidirectional可控silicon is used in: heating controllers, dimming/speed controllers, washing machines, mixers, juicers, bread makers, vacuum cleaners, and other household appliances.
High Purity Temperature-Controllable Silicon BTA12's Limit Value (T)CASE=25℃)：
Off-state Repetitive Peak Voltage VDRM/VRRM：600/800V
DC RMS Current IT(RMS)：12A
Non-repetitive surge current in conducting stateTSM：120A
I2t-value: 78A2s
Critical rise rate of forward current dIT/dt：50Aμs
Gate Peak Current IGM：4A
Gate Average Power PG(AV)：1W
Storage Temperature: TSTG：-40~+150℃
Work Temperature Tj：-40~+125℃
High purity BTA12可控硅 electrical characteristics:
| Symbol | Parameters | Numerical value | Unit | ||
| TW | SW | CW | |||
| IGT | Gate trigger current | ≤5 | ≤10 | ≤35 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V | ||
| VGD | Gate voltage not triggering | ≥0.2 | |||
| IH | Maintain Current | ≤10 | ≤15 | ≤35 | mA |
| IL | Hold Current I-III | ≤10 | ≤25 | ≤50 | |
Hold Current II | ≤15 | ≤30 | ≤60 | ||
| dVD/dt | Critical dv/dt for off-state voltage | ≥20 | ≥40 | ≥500 | V/μs |
| VTM | Forward Voltage Drop | ≤1.55 | V | ||
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,TJ=25℃ | ≤5 | ≤5 | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,TJ=125℃ | ≤1 | ≤1 | ≤1 | mA | |
High Purity Temperature Controllable Silicon BTA12 Package Outline Dimensions:
