Application Fields of BTA26 Bi-directional Silicon Controlled Rectifier (SCR):
BTA26 Bidirectional Silicon Controlled Rectifiers are used in: heating controllers, color light controllers, rice cookers, gas ignition devices, electric fan speed regulators, etc.
25A Bi-directional可控硅BTA26 Limit ValuesCASE=25℃)：
| Symbol | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 25 | A |
| ITSM | Non-repetitive surge current in conducting state | 250 | |
| I2t | I2t-value | 340 | A2s |
| dIT/dt | Critical rise rate of conducting current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Gate Average Power | 1 | W |
| Tstg | Storage Temperature | -40~+150 | ℃ |
| Tj | Work Completion Temperature | -40~+125 |
Electrical characteristics of 25A bi-directional thyristor BTA26:
| Symbol | Parameters | Numeric | Unit | |
| CW | BW | |||
| IGT | Gate trigger current | ≤35 | ≤50 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V | |
| VGD | Gate trigger voltage not activated | ≥0.2 | ||
| IH | Maintain Current | ≤50 | ≤75 | mA |
| IL | Hold Current I-III | ≤60 | ≤80 | |
Holding Current II | ≤80 | ≤90 | ||
| dVD/dt | Off-state voltage critical rise rate | ≥500 | ≥1000 | V/μs |
| VTM | Forward Bias Voltage Drop | ≤1.55 | V | |
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,TJ=25℃ | ≤5 | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,TJ=125℃ | ≤2 | ≤2 | mA | |
