Three Quadrant Bidirectional Silicon Controlled RectifierProduct Footprint Diagram for BTB04:
Triple-axis bidirectional silicon-controlled rectifierBTB04 Features:
NPNPN five-layer silicon bidirectional device
P-type through-hole diffused isolation
Tabletop glass passivation process
Backside multi-layer metal electrodes
High working temperature, strong directional change ability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Three-quadrant bi-directional silicon-controlled rectifierBTB04's Ultimate Value (T)CASE=25℃)：
| Symbol | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 4 | A |
| ITSM | Non-repetitive surge current in conducting state | 40 | A |
| I2t | I2t value | 8 | A2s |
| dIT/dt | Critical rise rate of conducting current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Gate average power | 1 | W |
| TSTG | Storage Temperature | -40~+150 | ℃ |
| Tj | Work temperature | -40~+125 | ℃ |
Triple-axis bidirectional可控硅BTB04 Electrical Characteristics:
| Symbol | Parameters | Number | Unit | ||
| TW | SW | CW | |||
| IGT | Gate trigger current | ≤5 | ≤10 | ≤35 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V | ||
| VGD | Door limit voltage not triggered | ≥0.2 | V | ||
| IH | Maintain Current | ≤10 | ≤15 | ≤35 | mA |
| IL | Hold Current I-III | ≤10 | ≤25 | ≤50 | mA |
| Grasp Current II | ≤15 | ≤30 | ≤60 | mA | |
| dVD/dt | Critical rise rate of off-state voltage | ≥20 | ≥40 | ≥400 | V/μs |
| VTM | Forward Voltage Drop | ≤1.55 | V | ||
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM=VRRM,TJ=25℃ | ≤5 | ≤5 | ≤5 | μA |
| Off-state repetitive peak current VD=VDRM=VRRM,TJ=125℃ | ≤0.5 | ≤0.5 | ≤0.5 | mA | |
