Product Features of BTB08可控硅for Vacuum Cleaners:
NPNPN five-layered silicon bidirectional device
P-type through diffusion isolation
Surface glass passivation process
Backside multi-layer metal electrodes
High working temperature, strong reversing capability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Limit values for vacuum cleaner可控硅 BTB08:
| Meets | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 8 | A |
| ITSM | Non-repetitive surge current in conducting state | 80 | |
| I2t | I2t-value | 36 | A2s |
| dIT/dt | Critical rise rate of on-state current | 50 | A/μs |
| IGM | Gate peak current | 4 | A |
| PG(AV) | Gate Average Power | 1 | W |
| Tstg | Storage Temperature | -40~+150 | ℃ |
| Tj | Working temperature | -40~+125 |
Electrical characteristics of the可控硅BTB08 for vacuum cleaner:
| Symbol | Parameters | Test Conditions | Numeric | Unit | |||
| IGT | Gate trigger current | VD=12V, RL=30Ω， Tj=25℃ | I-II-III | ≤5 | ≤10 | ≤35 | mA |
| VGT | Gate Trigger Voltage | I-II-III | ≤1.3 | V | |||
| VGD | Door limit does not trigger voltage | VD=VDRM,Tj=125℃ | ≥0.2 | ||||
| IH | Maintain Current | IT=100mA | ≤10 | ≤15 | ≤35 | mA | |
| IL | Hold the current | IG=1.2IGT | I-III | ≤10 | ≤25 | ≤50 | |
| II | ≤15 | ≤30 | ≤60 | ||||
| dVD/dt | Critical dv/dt for off-state voltage | VD=67%VDRM, Gate Open Circuit, Tj=125℃ | ≥20 | ≥40 | ≥400 | V/μs | |
| VTM | Forward Bias Voltage Drop | ITM=11A,tp=380μs | ≤1.55 | V | |||
| IDMR/IRRM | Off-state repetitive peak current | VD=VDRM/VRRM,Tj=25℃ | ≤5 | ≤5 | ≤5 | μA | |
| VD=VDRM/VRRM,Tj=125℃ | ≤1 | ≤1 | ≤1 | mA | |||
