Product Features of 12A High-Voltage可控硅 BTB12:
NPNPN five-layer structure silicon bidirectional device
P-type Through Diffused Isolation
Surface glass passivation process
Backside multi-layer metal electrodes
High work temperature, strong reversing capability
High voltage rate of change dV/dt
Large current change rate dI/dt
Compliant with RoHS standards
Packaging Type: TO-220B
Application Fields for 12A High-Voltage Thyristor BTB12:
BTB12 Bi-directional Silicon Controlled Rectifiers are used in: heating controllers, dimming/speed controllers, washing machines, mixers, coffee makers, electric tools, vacuum cleaners, and other household appliances.
12A High-Voltage Thyristor BTB12 Limit ValuesCASE=25℃)：
| Symbol | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 12 | A |
| ITSM | Non-repetitive surge current in conductive state | 120 | |
| I2t | I2t-value | 78 | A2s |
| dIT/dt | Critical rise rate of conducting current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Gate average power | 1 | W |
| Tstg | Storage Temperature | -40~+150 | ℃ |
| Tj | Work temperature | -40~+125 |
12A High Voltage Silicon Controlled Rectifier BTB12 Electrical Characteristics:
| Symbol | Parameters | Numeric | Unit | ||
| TW | SW | CW | |||
| IGT | Gate trigger current | ≤5 | ≤10 | ≤35 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V | ||
| VGD | Gate voltage not triggering | ≥0.2 | |||
| IH | Maintain Current | ≤10 | ≤15 | ≤35 | mA |
| IL | Maintain Current I-III | ≤10 | ≤25 | ≤50 | |
Hold Current II | ≤15 | ≤30 | ≤60 | ||
| dVD/dt | Critical rise rate of off-state voltage | ≥20 | ≥40 | ≥500 | V/μs |
| VTM | Forward Voltage Drop | ≤1.55 | V | ||
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,TJ=25℃ | ≤5 | ≤5 | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,TJ=125℃ | ≤1 | ≤1 | ≤1 | mA | |
