High-temperature junction silicon controlled rectifier BTB16 product features:
NPNPN five-layered silicon bidirectional device
P-type through diffusion isolation
Tabletop Glass Passivation Process
Backside multi-layer metal electrodes
High workability temperature, strong reversing capability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Packaging: TO-263
High-temperature junction silicon controlled rectifier BTB16 application:
High-temperature junction silicon controlled rectifier BTB16 is applicable to: heating controllers, speed controllers, washing machines, mixers, juicers, electric tools, vacuum cleaners, and other household appliances.
High-temperature junction silicon controlled rectifier BTB16's limit value (T)CASE=25℃)：
| Symbol | Parameters | Numeric | Unit |
| VDRM/VRRM | Off-state repetitive peak voltage | 600/800 | V |
| IT(RMS) | DC RMS Current | 16 | A |
| ITSM | Non-repetitive surge current in conducting state | 160 | |
| I2t | I2t value | 140 | A2s |
| dIT/dt | Critical rise rate of forward current | 50 | A/μs |
| IGM | Gate Peak Current | 4 | A |
| PG(AV) | Average Gate Power | 1 | W |
| TSTG | Storage Temperature | -40~+150 | ℃ |
| Tj | Work completion temperature | -40~+125 |
High junction temperature可控硅 BTB16 electrical characteristics:
| Symbol | Parameters | Number | Unit | ||
| SW | CW | BW | |||
| IGT | Gate trigger current | ≤10 | ≤35 | ≤50 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V | ||
| VGD | Door limit does not trigger voltage | ≥0.2 | |||
| IH | Maintain current | ≤15 | ≤30 | ≤50 | mA |
| IL | Maintain current I-III | ≤25 | ≤50 | ≤70 | |
Maintain Current II | ≤30 | ≤60 | ≤80 | ||
| dVD/dt | Critical off-state voltage rise rate | ≥40 | ≥500 | ≥1000 | V/μs |
| VTM | Forward Voltage Drop | ≤1.55 | V | ||
High junction temperature thyristor, BTB16 package dimensions:
