Product Features of the Three-End Bi-Directional可控硅 BTB24:
NPNPN five-layer silicon bidirectional device
Type P Thru-Diffused Isolation
Tabletop glass passivation process
Backside multi-layer metallic electrodes
High work temperature, strong reversing capability
High voltage rate of change dV/dt
Large current rate of change dI/dt
Compliant with RoHS standards
Packaging Type: TO-220B
The application fields of the three-terminal bidirectional可控硅BTB24:
Heating Controller
Color Light Controller
Electric Rice Cooker
Gas Igniter
Fan Speed Controller
Limiting values for the triode bidirectional可控硅 BTB24CASE=25℃)：
Off-state Repeat Peak Voltage VDRM/VRRM：600/800V
DC RMS Current IT(RMS)：25A
Non-repetitive surge current in conducting stateTSM：250A
I2t-value: 340A2s
Critical rise rate of on-state current dIT/dt：50Aμs
Gate Peak Current IGM：4A
Gate Peak Power PGM：5W
Average Gate Power PG(AV)：1W
Storage Temperature TSTG：-40~+150℃
Work Temperature Tj：-40~+125℃
Electrical characteristics of the triple-end bidirectional可控硅 BTB24:
| Symbol | Parameters | Number | Unit | |
| CW | BW | |||
| IGT | Gate Triggering Current | ≤35 | ≤50 | mA |
| VGT | Gate Trigger Voltage | ≤1.3 | V | |
| VGD | Gate trigger voltage does not activate | ≥0.2 | ||
| IH | Maintain Current | ≤50 | ≤75 | mA |
| IL | Maintain Current I-III | ≤60 | ≤80 | |
Grasp Current II | ≤80 | ≤90 | ||
| dVD/dt | Critical off-state voltage rise rate | ≥500 | ≥1000 | V/μs |
| VTM | Forward Bias Voltage Drop | ≤1.55 | V | |
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM/VRRM,TJ=25℃ | ≤5 | ≤5 | μA |
Off-state repetitive peak current VD=VDRM/VRRM,TJ=125℃ | ≤2 | ≤2 | mA | |
