Product Features of Domestic Silicon Controlled Rectifier Replacing MCR100-8:
PNPN four-layer silicon unidirectional device
Door ultra-sensitive trigger
P-type through-diffused isolation
Surface Glass Passivation Process
Backside multi-layer metal electrodes
Compliant with RoHS standards
Packaging: SOT-23-3L
Application fields for domestic可控硅 replacing MCR100-8:
The MCR100-8 unidirectional silicon controlled rectifier is used in: pulse ignition systems, negative ion generators, logic circuit drives, color light controllers, leakage protectors, vacuum cleaner soft starts, and more.
Domestic可控硅replacing the MCR100-8's limit valueCASE=25℃)：
Off-state repetitive peak voltage VDRM/VRRM：600/800V
Average Current IT(AV)：0.5A
DC RMS Current IT(RMS)：0.8A
Non-repetitive surge current in conducting stateTSM：8A
I2t value: 0.32A2s
Critical rise rate of forward current dIT/dt：50A/μs
Gate Peak Current IGM：0.2A
Gate Peak Power PGM：0.5W
Gate Drive Average Power PG(AV)：0.1W
Storage Temperature TSTG：-40~+150℃
Work Temperature Tj：-40~+110℃
Domestic可控硅 replacing MCR100-8 electrical characteristics:
| Symbol | Parameters | Numerical | Unit | ||
| MIN | TYP | MAX | |||
| IGT | Gate trigger current | 10 | 200 | μA | |
| VGT | Gate Trigger Voltage | 0.8 | V | ||
| VGD | Gate trigger voltage does not activate | 0.2 | |||
| IH | Maintain Current | 3 | mA | ||
| IL | Hold the current | 4 | |||
| dVD/dt | Off-state voltage critical rise rate | 10 | V/μs | ||
| VTM | Forward Bias Voltage Drop | 1.5 | V | ||
| IDRM/IRRM | Off-state repetitive peak current VD=VDRM=VRRM,TJ=25℃ | 5 | μA | ||
Off-state repetitive peak current VD=VDRM=VRRM,TJ=111℃ | 100 | ||||
