Product Description
The Pulsed Electron Beam Deposition (PED) system emits high-energy pulsed (100ns) electron beams (about 1000 A, 15 keV) that penetrate nearly 1 um into the target material, causing rapid evaporation and forming a plasma. The non-equilibrium extraction (ablation) on the target material ensures the composition of the plasma matches the stoichiometry of the target. Under optimal conditions, the stoichiometry of the target can be maintained consistent with the deposited film. All solid materials such as metals, semiconductors, and insulators can be used to deposit their respective films with PED technology.
Product Features
Independent turnkey pulse electron beam deposition system (PED)
* Thin film deposition, multilayer heterostructures and superlattices
Oxygen compatibility during oxide film deposition
Upgrade Options: Ion-Assisted PVD, Continuous Component Deposition PVD, Sample System Load-Lock
Additional Deposition Sources: Pulsed Laser and Radio Frequency DC Sputtering
Integrated XPS/ARPES UHV cluster system, in-situ high vacuum wafer transfer system
Representative materials examples deposited by the Pulse Electron Beam Deposition (PED) system
High-Temperature Superconductor (HTS) YBCO (and GdBCO) Films
Oriented (Ba-SrTiO3) Film
Metal Oxide (SrRuO3) Films
Insulating/Soundproofing Glass (SiO2) Film and Al2O3 Film
Polytetrafluoroethylene (PTFE) Film
Technical Specifications
| Vacuum cavity | 18" Diameter Spherical Cavity 8" CF Window 6.75" CF PED Source Window 3 6" CF Windows Additional 2.75" & 1.33" CF windows | PED Source | Electron Gun Energy: 8-20 keV Pulse Energy: Maximum Energy 800 mJ Minimum Energy: 100 mJ Process Gas Pressure: 3-20 mTorr Process Gases: Oxygen, Nitrogen, Argon Pulse Energy Variation: ±10% Pulse Width: 100 ns Maximum repetition rate: 10 Hz at 15 kV, 5 Hz at 20 kV Minimum cross-sectional area:8 x10-2 cm2 Highest Energy Density:1.3 x 108 W/cm2 Z-axis alignment range: 50 mmXY alignment to Fan Wei: +/- 20 mm Spark plug lifespan ~3x107 Pulse |
| Wafer Heater | Maximum diameter 2".Small 10x10mm2 Maximum Temperature: 850°C Wafer Rotation: 1-30 RPM (360° rotation)Wafer Heater: Compatible with 1 atmosphere oxygen pressure The heater temperature is controlled by a programmable PID. | ||
| Multi-target rotating table | 6 pieces of 1" target material or 3 pieces of 2" target material Target Material Rotation: Continuous 360° rotation (1-20 RPM) Target material gridded scan Unique Target Material Grating Ablation Solution Target Material Index, Multilayer Coating Target material height adjustable Target material baffle prevents cross-contamination between target materials. Offer the capability to provide continuous assembly extension/combination PED | PED System Software | Windows 7, LabVIEW 2013 Control Base Plate Heating Platform Goniometer for target material control Vacuum Pump Control Quality Flowmeter Controller External PED Source Trigger Optional process automation options |
| Vacuum pump | Dry Pump, Turbomolecular Pump Base Vacuum Pressure: Standard Configuration8 x 10-8 Torr The rotational speed of the turbomolecular pump is controlled by software. |
