Product Information

Laser MBE is a commonly used term, referring to a method that is an ideal approach for nanoscale thin-film synthesis. The combined application of PLD under high vacuum and in-line process monitoring with Reflection High Energy Electron Diffraction (RHEED) provides users with single-molecule level control over thin-film growth akin to MBE.

• High-pressure RHEED for in-situ thin film growth control.

• Offer atomic-level thin film growth and growth mode control (e.g., 2D growth mode achieved through RHEED oscillation).

• RHEED is a diffraction technique. Structural information can be decoded in real-time from the diffraction patterns produced on the screen.

• Thickness and sedimentation rate information.

• Stress and other structural defects in the film substrate interface are detectable.

• This information is crucial for the high-quality epitaxial film growth of various nanoscale structures.

Technical Specifications

• Maximum beam voltage: 30 KeV.

• Two magnetic coils for beam motion within and perpendicular to the substrate plane.

• Twin-impeller pump (compatible with oxygen up to 500 mTorr).

• Concave RHEED screen with optical valve.

• 12-megapixel CCD camera.

• K-space Data Collection and Software.

• Fully integrated with PLD system.