Electrical Characteristics

FEOL Electrical Characterization

In IC device manufacturing electrical characteristics of layers and films must be well controlled. Conventional contact test methods on wafers, like the 4-point probe FSM offers, do no longer meet modern requirements. State of the art IC feature extremely thin, often only a few atomic layers of material. FSM's contactless RsL probe for sheet resistance and leakage as well as the non-destructive EOT probe for IC-CV measurements meet the challenge to characterize ultra shallow junctions and thin dielectric materials on production wafers.

FSM offers contact and non-contact electrical characterization metrology used in FEOL device

3DIC TSV and BWS TTV Silicon Wafer Surface Topography Measurement

Film Stress Tester

FEOL Electrical Characterization - Electrical Properties

Thin Wafer Metrology

Film Adhesion Test

FSM offers contact and non-contact electrical characterization metrology used in FEOL device