Silicon Carbide HMDS Vacuum Oven SiC Substrate HMDS Oven Third-Generation Semiconductor HMDS OvenBackground
Silicon carbide, as a typical representative of the third-generation semiconductor materials, is also one of the widely used wide-bandgap semiconductor materials with mature crystal production technology and device manufacturing levels. It has now formed a global industry chain covering materials, devices, and applications.
Silicon carbide (SiC) is a compound semiconductor material composed of silicon (Si) and carbon (C). It boasts an extremely strong bonding and is highly stable in terms of heat, chemistry, and mechanics. SiC exists in various polymorphs (polycrystalline forms), each with distinct physical property values.
Silicon Carbide HMDS Vacuum Oven SiC Substrate HMDS Oven Third-Generation Semiconductor HMDS OvenThe function of
The HMDS furnace deposits HMDS vapor onto the surfaces of materials such as GaN, SiC, silicon wafers, niobium lithium, glass, sapphire, and wafers in semiconductor manufacturing. After the system is heated, it can react to generate compounds primarily composed of siloxanes. It successfully transforms the silicon wafer surface from hydrophilic to hydrophobic, and its hydrophobic groups can bond well with photoresist, serving as a coupling agent.
Silicon Carbide HMDS Vacuum Oven SiC Substrate HMDS Oven Third-Generation Semiconductor HMDS OvenKey Performance:
Space (mm): 300*300*300
450*450*450
600*600*600, customizable
Applicable Products: Compatible with 1-12 inch wafers and fragments
Temperature Range: RT+10-250℃
Temperature Stability: ≤±0.5℃
Vacuum Level: ≤133 Pa (1 Torr)
Material: 316L Stainless Steel + Cold Rolled Sheet with Powder Coating
HMDS system: Sealed design, automatic activation, adjustable data
Level gauge: Low level alarm
Storage Bottle: HMDS Capacity 1000ml
Vacuum Pump: Oil-Free Scroll Vacuum Pump
Operation Time: 20 Min
Unit of Measure: S/Pa
Operation Mode: Automatic Operation
Inlet: N2
Exhaust: Organic emissions
Power: 220V, 50-60Hz
Power: 2800W
