Shanghai Junsi Experimental Instruments Co., Ltd.VIP

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HDMS Oven, HDMS Vacuum Oven, Intelligent HDMS Pretreatment Oven

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  • Unit Price

    $189850.00/Tai

  • Brand

    Junsi

  • MOQ

    1Tai

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上海隽思实验仪器有限公司

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Product Details

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  • Brand:

    Junsi

  • Unit Price:

    $189850.00 / Tai

  • MOQ:

    MOQ1Tai

  • Total:

    689568Tai

  • Address:

    Shanghai

  • Delivery:

    0Hours

  • View More

Description

HDMS Oven  HDMS Vacuum Oven  Technical Specifications of the Smart HDMS Pretreatment Oven

    Capacity: 2-12-inch wafers, squares, fragments, etc.

    Material: Inner box made of 316L grade stainless steel

    Process Temperature: 80-150℃

    Temperature Resolution: 0.1℃

    Temperature Fluctuation: ≤±0.5

    Vacuum Level: ≤1 torr

    Operational Interface: Human-Machine Interface, One-Touch Operation

    Intracavitary Layering: 1-4 Layers

    Process Units: 5 process units can be saved

    Image Processing: Image Inversion

    Vacuum Pumps: Oil-Free Imports

    Safety Devices: Emergency Stop, HMDS Leak Alarm, Low HMDS Level Alarm, Overheat Protection, Leakage Protection, Overheat Protection, etc.


HDMS Oven  HDMS Vacuum Oven  Intelligent HDMS Pretreatment Oven Application

Monocrystalline Silicon Wafers

The most commonly used substrate material, widely utilized in the manufacturing of integrated circuits (ICs), microprocessors, memory devices, MEMS components, power devices, and more.

2. SOI Substrate

Integrated circuits for high-performance, low-power applications, such as high-frequency analog and digital circuits, RF devices, and power management chips.

3. SiGe substrate

SiGe, or Germanium-Silicon, is an alloy of silicon and germanium in any molar ratio, with the molecular formula of Si1-xGex. It is commonly produced by epitaxial methods. Used in heterojunction bipolar transistors, mixed-signal circuits, and radio frequency applications.

4. Compound semiconductor substrate

Substrate (GaAs): Microwave and millimeter-wave communication devices

Nitrided GaN Substrate: Used for RF power amplifiers, HEMT, etc.

Silicon Carbide Substrate (SiC): Used in electric vehicles, power converters, and other power devices

Substrate (InP): Used for lasers, photodetectors, etc.

5. Sapphire Substrate: Used for LED manufacturing, RFIC (Radio Frequency Integrated Circuit) etc.

6. Germanium Substrate: Used for infrared optical devices, etc.

7. LN (Niobium-Lithium): Used for acoustic surface wave filters, MEMS, etc.

8. LT (Tantalum Lithium): Used for acoustic surface wave filters, MEMS, etc.

9. Glass Substrate: Used for LCD, OLED, optical filters, etc.

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Unit Price $189850.00 / Tai
Sales None
Delivery Shanghai
Stock 689568TaiMOQ1Tai
Brand Junsi
Is importing No
Origin Shanghai
Customized Processing Certainly
Expiry Long Valid
Update 2025-09-01 10:06
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Shanghai Junsi Experimental Instruments Co., Ltd.Published byHDMS Oven, HDMS Vacuum Oven, Intelligent HDMS Pretreatment OvenGallery Lib

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