4.5A Field-Effect Transistor: Pinout Diagram 2300
4.5特点：Feature of MOSFET 2300
VDS=20V
ID=4.5A
RDS(ON)＜30mΩ@VGS=4.5V
Surface Mount Technology: SOT-23
4.5Application of Field-Effect Transistor 2300:
Battery Protection
Packaged Switch
Uninterruptible Power Supply (UPS)
4.5Field Effect Transistor A's ultimate value: 2300
(As otherwise noted, T)C=25℃)
| Symbol | Parameters | Numeric | Unit |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | ±12 | |
| ID | Leakage Current - ContinuousA=25℃ | 4.5 | A |
| Drain Current - ContinuousA=70℃ | 2.8 | ||
| IDM | Leakage Current - Pulse | 14.4 | |
| PD | Total Dissipation Power TA=25℃ | 1 | W |
| RθJA | Thermal resistance to the environment | 125 | ℃/W |
| RθJC | Thermal resistance to the shell | 80 | |
| TSTG | Storage Temperature | -55~150 | ℃ |
| TJ | Work completion temperature | -55~150 |
4.52300 Field-Effect Transistor's Electrical Characteristics:
(As noted unless otherwise specified, T)J=25℃)
| Symbol | Parameters | MIN Value | Typical Value | MAX Value | Unit |
| BVDSS | Leakage-Source Breakdown Voltage | 20 | 22 | V | |
| RDS(ON) | Static leakage conductance resistance VGS=4.5V,ID=3A | 22 | 30 | mΩ | |
Static leakage on-state resistance VGS=2.5V,ID=2A | 28 | 35 | |||
| VGS(th) | Gate-Opening Voltage | 0.5 | 0.75 | 1.2 | V |
| IGSS | Gate leakageFlow | ±100 | nA | ||
| Qg | Gate Charge | 4.6 | nC | ||
| Qgs | Lattice charge density | 0.7 | |||
| Qgd | Grid leak charge density | 1.5 | |||
| Ciss | Input Capacitor | 310 | pF | ||
| Coss | Output Capacitor | 49 | |||
| Crss | Reverse Transmission Capacitor | 35 | |||
| td(on) | Delay Start Time | 1.6 | ns | ||
| tr | Initiate ascending time | 42 | |||
| td(off) | Shut-off Delay Time | 14 | |||
| tf | Initiate descent time | 7 |
4.5Image of package dimensions for MOSFET 2300 encapsulation:
