P-Type MOSFET 2305 Pinout Diagram:
P-type Field-Effect Transistor 2305 Features:
VDS=-20V
ID=-4.9A
RDS(ON)＜38mΩ@VGS=-4.5V
Packaging: SOT-23
P-type MOSFET 2305's Limiting Parameters:
(As stated, unless otherwise specified, T)J=25℃)
| Symbol | Parameters | Numeric | Unit |
| VDS | Drain-Source Voltage | -20 | V |
| VGS | Gate-Source Voltage | ±12 | |
| ID | Leakage Current - ContinuousA=25℃ | -4.9 | A |
| Leakage Current - ContinuousA=70℃ | -3.9 | ||
| IDM | Leakage Current - Pulse | -14 | |
| PD | Total Dissipation Power (T)A=25℃ | 1.31 | W |
| RθJA | Thermal resistance to the environment | 120 | ℃/W |
| TSTG | Storage Temperature | -55~150 | ℃ |
| TJ | Working temperature | -55~150 |
P-type MOSFET 2305 electrical characteristics:
(As noted unless otherwise specified, T)J=25℃)
| Symbol | Parameters | MIN Value | TYP value | MAX Value | Unit |
| BVDSS | Leakage-Source Emitter Breakdown Voltage | -20 | V | ||
| RDS(ON) | DC Leakage On-Resistance VGS=-4.5V,ID=-4.9A | 32 | 38 | mΩ | |
Static leakage conductance resistance VGS=-2.5V,ID=-3.4A | 45 | 55 | |||
DC Leakage On-Resistance VGS=-1.8V,ID=-2A | 65 | 85 | |||
| VGS(th) | Gate-Trigger Voltage | -0.4 | -1 | V | |
| IDSS | Zero栅压漏极电流 VDS=-16V,VGS=0V,TJ=25℃ | -1 | uA | ||
Zero-gate voltage leakage current VDS=-16V,VGS=0V,TJ=55℃ | -5 | ||||
| IGSS | Gate leakage current | ±100 | nA | ||
| gfs | Forward Bias Conductance | 12.8 | S | ||
| Qg | Gate Charge | 10.2 | 14.3 | nC | |
| Qgs | Lattice charge density | 1.89 | 2.6 | ||
| Qgd | Grid leakage charge density | 3.1 | 4.3 | ||
| Ciss | Input Capacitor | 857 | 1200 | pF | |
| Coss | Output Capacitor | 114 | 160 | ||
| Crss | Reverse Transmission Capacitor | 108 | 151 | ||
| td(on) | Delay Start Time | 5.6 | 11.2 | ns | |
| tr | Initiate ascending time | 40.8 | 73 | ||
| td(off) | Shut-off delay time | 33.6 | 67 | ||
| tf | Start Descent Time | 18 | 36 |
Package Outline Dimensions of P-type MOSFET 2305:
