Low-voltage PMOS transistor 2307 features:
VDS=-20V
ID=-7A
RDS(ON)＜25mΩ@VGS=-4.5V
Packaging: SOT-23
2307 Low-Voltage PMOS Applications:
Quick charging
E-cigarettes
UPS Uninterruptible Power Supply
Low-voltage PMOS transistor 2307: Limit values
(As specified unless otherwise stated, T)A=25℃)
| Symbol | Parameters | Number | Unit |
| VDS | Drain-Source Voltage | -20 | V |
| VGS | Gate-Source Voltage | ±12 | |
| ID | Leakage Current - ContinuousA=25℃ | -7 | A |
| Leakage Current - ContinuousA=70℃ | -4.8 | ||
| IDM | Leakage Current - Pulse | -23.8 | |
| PD | Total Dissipation Power (T)A=25℃ | 2 | W |
| RθJA | Thermal resistance to the environment | 62.5 | ℃/W |
| RθJC | Thermal resistance to the casing | 80 | |
| TSTG | Storage Temperature | -55~150 | ℃ |
| TJ | Work temperature | -55~150 |
2307 Low-Voltage PMOS Transistor Electrical Characteristics:
(As stated unless otherwise specified, T)J=25℃)
| Symbol | Parameters | MIN Value | TYP Value | MAX Value | Unit |
| BVDSS | Leakage-Source Breakdown Voltage | -20 | -22 | V | |
| RDS(ON) | DC On-Resistance VGS=-4.5V,ID=-6A | 20 | 25 | mΩ | |
Static Leakage Conductance Resistance VGS=-2.5V,ID=-5A | 28 | 35 | |||
| VGS(th) | Gate-Opening Voltage | -0.5 | -0.7 | -1.2 | V |
| IDSS | Zero gate leakage current VDS=-20V,VGS=0V | -1 | uA | ||
| IGSS | Gate leakage current | ±100 | nA | ||
| Qg | Gate Charge | 15.3 | nC | ||
| Qgs | Lattice charge density | 2.2 | |||
| Qgd | Grid leak charge density | 4.4 | |||
| Ciss | Input Capacitor | 2000 | pF | ||
| Coss | Output Capacitor | 242 | |||
| Crss | Reverse Transmission Capacitor | 231 | |||
| td(on) | Delay Start Time | 10 | ns | ||
| tr | Start ascending time | 31 | |||
| td(off) | Shut-off delay time | 28 | |||
| tf | Initiate descent time | 8 |
