Mobile Fast Charging MOSFET 3400 Features:
VDS=30V
ID=6.2A
RDS(ON)＜28mΩ@VGS=10V
Packaging: SOT-23
Application Fields of 3400 Fast Charging MOSFET:
Lithium-ion Battery Protection
Fast Charging for Mobile Phones
Mobile Fast Charging MOSFET 3400's Maximum Value:
(As otherwise specified, T)C=25℃)
Leakage-Source Voltage VDS：30V
Gate-Source Voltage VGS：±12V
Leakage Current - ContinuousD：6.2A
Leakage Current - PulseDM：20A
Total Dissipation Power PD：1W
Storage Temperature TSTG：-55~150℃
Work Temperature TJ：-55~150℃
Thermal Resistance R to the environmentθJA：125℃/W
Thermal resistance R to the shellθJC：85℃/W
Mobile Fast Charging MOSFET 3400 electrical characteristics:
(As stated unless otherwise specified, T)C=25℃)
| Symbol | Parameters | MIN Value | TYP Value | MAX Value | Unit |
| BVDSS | Leakage-Source Breakdown Voltage | 30 | 33 | V | |
| RDS(ON) | Static leakage conductance resistance VGS=10V,ID=5.8A | 20 | 28 | mΩ | |
Static leakage conductance resistance VGS=4.5V,ID=5A | 24 | 32 | |||
Static leakage conductance resistance VGS=2.5V,ID=4A | 31 | 55 | |||
| VGS(th) | Gate-Trigger Voltage | 0.5 | 0.85 | 1.2 | V |
| IGSS | Gate leakage current | ±100 | nA | ||
| gfs | Forward Bias Conductance | 25 | S | ||
| Qg | Gate Charge | 11.5 | nC | ||
| Qgs | Latticed charge density | 1.6 | |||
| Qgd | Grid leakage charge density | 2.9 | |||
| Ciss | Input Capacitor | 860 | pF | ||
| Coss | Output Capacitor | 84 | |||
| Crss | Reverse Transmission Capacitor | 70 | |||
| td(on) | Delay Start Time | 5 | ns | ||
| tr | Initiate Ascending Time | 47 | |||
| td(off) | Shutoff Delay Time | 26 | |||
| tf | Engage descent timing | 8 |
