In applications of AlN ceramics, aluminum nitride (AlN) has a hexagonal wurtzite structure with excellent thermal shock resistance, insulating properties, low thermal expansion coefficient, and mechanical performance. Its theoretical thermal conductivity reaches up to 320 W·m-1·K-1, and it exhibits superior high-temperature resistance even in special atmospheres. It is an ideal substrate and packaging material for large-scale integrated circuits, although it has poor antioxidant properties.

Alumina nitride ceramic boasts excellent thermal conductivity.

High thermal conductivity, meeting the heat dissipation requirements of devices.

(2) Excellent heat resistance, meets the high-temperature (greater than 200°C) application requirements for power devices.

(3) Thermal expansion coefficient matching, aligned with the thermal expansion coefficient of the chip material, to reduce封装 thermal stress.

(4) Low dielectric constant, excellent high-frequency characteristics, reduces device signal transmission time, and enhances signal transmission speed.

(5) High mechanical strength, meeting the mechanical performance requirements during device packaging and application.

(6) Excellent corrosion resistance, able to withstand strong acids, alkalis, boiling water, organic solvents, etc.

(7) Dense structure, meets the sealing requirements for electronic devices.