I. Description

SI4N60 is a high-voltage MOSFET designed with enhanced features, such as rapid switching times, low gate charge, low on-state resistance, and robust avalanche characteristics. This power MOSFET is commonly used in high-speed switching applications for power supplies, PWM motor control, DC-DC converters, and bridge circuits.

II. Features

RDS() = 2.5Ω@VGS = 10 v

Ultra-low gate charge (average 15.0 nC)

Low reverse transmission capacitance (CRSS = typical 8.0 pF)

Rapid switching capability

Enhanced dv/dt capability, high durability