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Product Details
Atomic Layer Deposition Systems, Nanomechanical Testing Equipment, Molecular ...
产品Price Negotiable
最小起订Quantity：1 Tai 供货总Quantity： 100 Tai
Product Description The Pulsed Electron Beam Deposition (PED) system emits high-energy pulsed (100ns) electron beams (about 1000 A, 15 keV) that penetrate nearly 1 um into the target material, causing rapid evaporation and forming a plasma. The non-equilibrium extraction (ablation) on the target material ensures the composition of the plasma matches the stoichiometry of the target. Under optimal conditions, the stoichiometry of the target can be maintained consistent with the deposited film. All solid materials such as metals, semiconductors, and insulators can be used to deposit their respective films with PED technology. Product Features Independent turnkey pulse electron beam deposition system (PED) * Thin film deposition, multilayer heterostructures and superlattices Oxygen compatibility during oxide film deposition Upgrade Options: Ion-Assisted PVD, Continuous Component Deposition PVD, Sample System Load-Lock Additional Deposition Sources: Pulsed Laser and Radio Frequency DC Sputtering Integrated XPS/ARPES UHV cluster system, in-situ high vacuum wafer transfer system Representative materials examples deposited by the Pulse Electron Beam Deposition (PED) system High-Temperature Superconductor (HTS) YBCO (and GdBCO) Films Oriented (Ba-SrTiO3) Film Metal Oxide (SrRuO3) Films Insulating/Soundproofing Glass (SiO2) Film and Al2O3 Film Polytetrafluoroethylene (PTFE) Film Technical Specifications Minimum cross-sectional area:8 x10-2 cm2 Highest Energy Density:1.3 x 108 W/cm2 Maximum diameter 2".Small 10x10mm2 Maximum Temperature: 850°C Base Vacuum Pressure: Standard Configuration8 x 10-8 Torr The rotational speed of the turbomolecular pump is controlled by software. Vacuum cavity 18" Diameter Spherical Cavity
8" CF Window
6.75" CF PED Source Window
3 6" CF Windows
Additional 2.75" & 1.33" CF windowsPED Source Electron Gun Energy: 8-20 keV
Pulse Energy: Maximum Energy 800 mJ
Minimum Energy: 100 mJ
Process Gas Pressure: 3-20 mTorr
Process Gases: Oxygen, Nitrogen, Argon
Pulse Energy Variation: ±10%
Pulse Width: 100 ns
Maximum repetition rate: 10 Hz at 15 kV, 5 Hz at 20 kV
XY alignment to Fan Wei: +/- 20 mm
Spark plug lifespan ~3x107 PulseWafer Heater
Wafer Heater: Compatible with 1 atmosphere oxygen pressure
The heater temperature is controlled by a programmable PID.Multi-target rotating table 6 pieces of 1" target material or 3 pieces of 2" target material
Target Material Rotation: Continuous 360° rotation (1-20 RPM)
Target material gridded scan
Unique Target Material Grating Ablation Solution
Target Material Index, Multilayer Coating
Target material height adjustable
Target material baffle prevents cross-contamination between target materials.
Offer the capability to provide continuous assembly extension/combination PEDPED System Software Windows 7, LabVIEW 2013
Control Base Plate Heating Platform
Goniometer for target material control
Vacuum Pump Control
Quality Flowmeter Controller
External PED Source Trigger
Optional process automation optionsVacuum pump Dry Pump, Turbomolecular Pump 
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