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Product Details
Instrument sales, rentals, maintenance, calibration, and acquisition, caterin...
产品Price 23000.00/Tai
最小起订Quantity：1 Tai 供货总Quantity： 20 Tai
Key Features and Technical Specifications Comprehensive solution for power device characterization, up to 1500 A and 10 kV Medium current measurement and high voltage bias (e.g., 500 mA, 1200 V) μΩ Conductance Resistance Measurement Function At high voltage bias, sub-pA level current measurements can be performed. Automated thermal testing conducted across a temperature range of -50°C to +250°C Comprehensive device measurement capabilities Automatic capacitance measurements (Ciss, Coss, Crss, etc.) can be performed at up to 3000 V DC bias. 10 μs high-power pulse measurement IGBT/FET gate charge measurement on packaged devices and wafers High-voltage/High-current Fast Switching Option, suitable for GaN Current Collapse Effect Characterization Up to 5 high-voltage (3 kV) power/metering channels, offering great flexibility Enhanced measurement efficiency Automatically switch between high-voltage and high-current measurements without the need for re-wiring. Automated test circuit formation for measuring the transistor junction capacitances (Ciss, Coss, Crss, Cgs, Cgd, Cds, etc.) on packaged devices and wafer-level components. Standard test fixtures with interlocking mechanism for packaging power device testing Supports high-power wafer testing up to 200 A and 10 kV Oscilloscope view supports verification of applied voltage and current waveforms MS Windows EasyEXPERT software simplifies the data management and analysis process. Upgradable and scalable hardware architecture A wide range of measurement module options Supports high-power devices with up to 6 connection pins 
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