One,Description

The SI4614 utilizes advanced trench technology to offer excellent RDS(ON) and low gate charge. Complementary MOSFETs are suitable for high-side switches that form level shifting, and are used in many other applications.

Two、General Characteristics

1.N-Channel

  VDS = 40V,ID =8.0A

  RDS(ON) < 22m? @ VGS=10V 

  RDS(ON) < 31m? @ VGS=4.5V

2.P-Channel

  VDS = -40V,ID = -7.0A

  RDS(ON) < 35m? @ VGS=-10V 

  RDS(ON) < 48m? @ VGS=-4.5V

3. High power and current handling capacity

4. Obtain Lead-Free Products

5. Surface Mount Package