I. Features

? Low standby current(Less than0.1uA)

? Low On-ResistanceMOSFET Power switching tube

— UtilizingMOS Process Design Power Tube

— 1 Channel1.6A Power tube internal resistance0.4 Ohm

— 2 Channel1.6A Power Tube Internal Resistance0.4 Ohm

? Lower input current

Integrated approximately15K Underground Pull-Down Resistor

— 3V Average Drive Signal200uA Input Current

? Overheat protection circuit with built-in hysteresis effect(TSD)

? Antistatic Rating:4KV (HBM)

Section 2: Application Scope

? 2-4 SectionAA/AAA Toy motor powered by dry cell batteries

? 2-5 Nickel-saving-Hydrogen/Nickel-Toy motor powered by cadmium rechargeable batteryDynamic

? 1-2 Battery-powered brushless motor

III. Overview

The product utilizesH Bridge circuit structural design with high reliabilityPower tube technology, especially suitable for driving coils, motors, and other inductive loads.Integrated circuitry insideN Channels andP Channel PowerMOSFET, workVoltage range coverage2V To8.6V。27℃，VDD=6.5VTwoUnder simultaneous operation of the channels,1 Channel maximum continuous output currentAchieve1.3AThe maximum peak output current reaches3A；2 Passageway widthContinuous Current Output1.3AThe maximum peak output current reaches3A。

This circuit is for power devices, inherently featuring certain internal resistance.Thermal dissipation, load current, power transistor conduction resistance, and ambient temperatureClosely related. The circuit design includes a chip-level temperature detection circuit, real-timeInternal heating in the monitoring chip; when the internal temperature of the chip exceeds the set value,Generate shutdown signal for power tube, shut off load current, and avoid anomalies.Continuous temperature increase due to use, leading to smoking in the plastic packaging.Serious safety incidents such as fires. Temperature hysteresis circuit built into the chip.Ensure the circuit is restored to a safe temperature before reapplying power to the power tube.Maintain control.