Currently in production, the ceramic substrate materials include BeO, aluminum oxide (Al2O3), and aluminum nitride (AlN), among others. Silicon nitride is widely recognized both domestically and internationally as a ceramic substrate material with high thermal conductivity and reliability, offering promising applications.

Silicon nitride ceramic substrates are silicon nitride powder compounded with a small amount of oxides and rare earth elements, sintered to form silicon nitride ceramic slices. They are a key material in the composition of power electronic devices, primarily responsible for insulation and heat dissipation.

The global Si3N4 ceramic substrate market is led by Japanese companies, accounting for over 70% of the global market. Manufacturers capable of commercializing Si3N4 ceramic substrates globally include Toshiba Corporation of Japan, Kyocera Corporation, and Rogers Corporation.

Silicon nitride ceramic substrates are indispensable in the配套 materials for billion-dollar high-power third-generation semiconductor devices. Their excellent mechanical properties and good high thermal conductivity potential make silicon nitride ceramics a promising candidate to fill the gaps in existing substrate materials such as alumina and aluminum nitride. They hold significant market potential in the application of semiconductor devices, particularly in the field of high-power semiconductor devices.