Used Equipment in Stock:

Equipment Application

Molecular Beam Epitaxy primarily focuses on the growth of crystals and superlattices with different structures or materials. This method allows for low growth temperatures, enabling precise control over the layer thickness, composition, and doping concentration of the epitaxial layers.

Equipment composition

The system is primarily composed of a vacuum obtaining system, epitaxial growth system (epitaxy chamber), rapid sample loading system (sample loading chamber), high-energy electron diffraction system, electrical control system, and computer control system.

Sedimentation chamber 1 set

The room is primarily used for Molecular Beam Epitaxy deposition: Ultimate vacuum: 2x10^-8 Pa; Vacuum chamber leak rate: less than 5x10^-8 Pa.L/S; Briefly exposed to atmosphere and then filled with dry nitrogen and evacuated to: 1.010-5 Pa, less than 40 minutes

Sample Room 1 set

Ultimate Vacuum: 6.6×10^-5 Pa; Leak Rate of Vacuum Leak Test: 10^-7 Pa.L/S

Exposure to the atmosphere for a short period, then filled with dry nitrogen and evacuated to: 5.010-4 Pa, less than 40 minutes

Sample library 1 set

Four samples can be placed in one time, the samples are glass, measuring 50×50×3mm.
Probe Clamping and Moving Drive Mechanism　 1 Set
Travel distance of 120mm, welding bellows for dynamic sealing, manual operation.

Beam Measurement Component: 1 Set

Used to measure the beam current values of various beam sources. Operation mode: When measuring the beam current of the beam source furnace, place the probe directly below the sample, complete the measurement, then withdraw the probe to clear the evaporation channel.

Computer Control System

The coating process is controlled by a computer, which consists of a computer, software, hardware interfaces, and a liquid crystal display.